unisonic technologies co., ltd 22N60 power mosfet www.unisonic.com.tw 1 of 8 copyright ? 2011 unisonic technologies co., ltd qw-r502-216.f 22a, 600v n-channel power mosfet ? description as the smps mosfet , the utc 22N60 uses utc?s advanced technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. ? features * r ds(on) = 0.35 ? * ultra low gate charge ( typical 150 nc ) * low reverse transfer capacitance ( c rss = typical 36 pf ) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol to-247 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 22N60l-t47-t 22N60g-t47-t to-247 g d s tube
22N60 power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-216.f ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 600 v gate-source voltage v gss 30 v avalanche current i ar 22 a continuous drain current i d 22 a pulsed drain current (note 1) i dm 88 a avalanche energy single pulsed e as 380 mj repetitive e ar 37 mj peak diode recovery dv/dt (note 3) dv/dt 18 v/ns power dissipation p d 370 w junction temperature t j 150 c operating temperature t opr -55 ~ +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are st ress ratings only and functional device operation is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 40 c /w junction to case jc 0.34 c /w
22N60 power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-216.f ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 600 v drain-source leakage current i dss v ds =600v, v gs =0v 50 a gate- source leakage current i gss v ds =0v, v gs =30v 100 na breakdown voltage temperature coefficient bv dss / t j i d =1ma,referenced to 25c 0.30 v/c on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 2.0 4.0 v static drain-source on-resistance r ds ( on ) v gs =10v, i d =13a (note 4) 0.26 0.35 ? dynamic parameters input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz 3570 pf output capacitance c oss 350 pf reverse transfer capacitance c rss 36 pf switching parameters turn-on delay time t d ( on ) v dd =300v, i d =22a, r g =6.2 ? v gs =10v (note 4) 26 ns turn-on rise time t r 99 ns turn-off delay time t d ( off ) 48 ns turn-off fall-time t f 37 ns total gate charge q g v ds =480v, v gs =10v, i d =22a (note 4) 150 nc gate source charge q gs 45 nc gate drain charge q gd 76 nc drain-source diode characteristics and maximum ratings drain-source diode forward voltage v sd v gs =0v, i s =22a 1.5 v continuous source current (body diode) i s (note 1) 22 a pulsed source current (body diode) i sm 88 a reverse recovery time t r r i s =22a, di/dt=100a/ s (note 4) 590 890 ns reverse recovery charge q rr 7.2 11 c notes: 1. 2. 3. 4. repetitive rating; pulse width limit ed by max. junction temperature. t j = 25c, l = 1.5mh, r g =25 ? , i as = 22a i sd 22a, di/dt 540a/ s, v dd v (br)dss , t j 150c. pulse width 300 s, duty cycle 2%.
22N60 power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-216.f ? test circuits v gs d.u.t. r g 10v v ds r d v dd pulse width 1 s duty factor 0.1% switching test circuit switching waveforms v dd driver 15v l v ds r g dut i as 0.01 20v t p v (br)dss i as t p unclamped inductive switching test circuit unclamped inductive switching waveforms 10v charge q gs q gd q g v gs gate charge test circuit gate charge waveform
22N60 power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-216.f ? test circuits(cont.) same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period
22N60 power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-216.f ? typical characteristics drain current, i s (a) source to drain voltage, v sd (v) drain to source voltage, v ds (v) drain-source on-state resistance characteristics source current vs. source to drain voltage 0.2 0 0.8 0.4 0.6 1.0 drain current, i d (a) 0 2 6 8 3 12 0 0 4 8 10 2 2 1 6 4 4 10 12 v gs =10v, i d =10a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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